j/sst108 series vishay siliconix document number: 70231 s-04028?rev. e, 04-jun-01 www.vishay.com 7-1 n?channel jfets j108 sst108 j109 sst109 j110 sst110
part number v gs(off) (v) r ds(on) max ( ) i d(off) typ (pa) t on typ (ns) j/sst108 ?3 to ?10 8 20 4 j/sst109 ?2 to ?6 12 20 4 j/sst110 ?0.5 to ?4 18 20 4
low on-resistance: j108 <8 fast switching?t on : 4 ns low leakage: 20 pa low capacitance: 11 pf low insertion loss low error voltage high-speed analog circuit performance negligible ?off-error? excellent accuracy good frequency response eliminates additional buffering analog switches choppers sample-and-hold normally ?on? switches current limiters the j/sst108 series is designed with high-performance analog switching applications in mind. it features low on-resistance, good off-isolation, and fast switching. the sst108 series is comprised of surface-mount devices featuring the lowest r ds(on) of any to-236 (sot-23) jfet device. the to-226aa (to-92) plastic package provides a low-cost option. both the j and sst series are available in tape-and-reel for automated assembly (see packaging information). for similar products packaged in to-206ac (to-52), see the 2n5432/5433/5434 data sheet. d s g to-236 (sot-23) top view 2 3 1 *marking code for to-236 sst108 (i8)* sst109 (i9)* sst110 (i0)* top view s g to-226aa (to-92) d 1 2 3 j108, j109, j110
j/sst108 series vishay siliconix www.vishay.com 7-2 document number: 70231 s-04028 ? rev. e, 04-jun-01
gate-drain, gate-source voltage ? 25 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . . storage temperature ? 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature ? 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation a 350 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a. derate 2.8 mw/ c above 25 c
limits j/sst108 j/sst109 j/sst110 parameter symbol test conditions typ a min max min max min max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a , v ds = 0 v ? 32 ? 25 ? 25 ? 25 v gate-source cutoff voltage v gs(off) v ds = 5 v, i d = 1 a ? 3 ? 10 ? 2 ? 6 ? 0.5 ? 4 v saturation drain current b i dss v ds = 15 v, v gs = 0 v 80 40 10 ma v gs = ? 15 v, v ds = 0 v ? 0.01 ? 3 ? 3 ? 3 gate reverse current i gss t a = 125 c ? 5 gate operating current i g v dg = 10 v, i d = 10 ma ? 0.01 na v ds = 5 v, v gs = ? 10 v 0.02 3 3 3 drain cutoff current i d(off) t a = 125 c 1.0 drain-source on-resistance r ds(on) v gs = 0 v, v ds 0.1 v 8 12 18 gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward transconductance g fs 17 common-source output conductance g os v ds = 5 v, i d = 10 ma, f = 1 khz 0.6 ms drain-source on-resistance r ds(on) v gs = 0 v, i d = 0 ma , f = 1 khz 8 12 18 common-source v ds = 0 v sst 60 common-source input capacitance c iss v gs = 0 v f = 1 mhz j series 60 85 85 85 common-source reverse v ds = 0 v sst 11 pf common-source reverse transfer capacitance c rss v gs = ? 10 v f = 1 mhz j series 11 15 15 15 equivalent input noise voltage e n v dg = 5 v, i d = 10 ma f = 1 khz 3.5 nv ? hz switching t d(on) 3 turn-on time t r v dd = 1.5 v, v gs(h) = 0 v 1 t d(off) v dd = 1.5 v, v gs(h) = 0 v see switching diagram 4 ns turn-off time t f 18 notes a. typical values are for design aid only, not guaranteed nor subject to production testing. nip b. pulse test: pw 300 s duty cycle 3%.
j/sst108 series vishay siliconix document number: 70231 s-04028 ? rev. e, 04-jun-01 www.vishay.com 7-3 40 ? 55 25 125 32 24 16 8 0 ? 15 85 ? 35 5 45 65 105 20 0 ? 8 ? 10 ? 4 8 4 0 50 20 10 0 1 10 100 1000 800 400 200 0 16 12 600 40 30 ? 2 ? 6 5 0 ? 6 ? 8 ? 10 4 3 2 1 0 30 01520 10 525 24 18 12 6 0 ? 2 ? 4 100 06810 40 20 0 80 60 24 on-resistance and drain current vs. gate-source cutoff voltage on-resistance vs. drain current turn-on switching turn-off switching on-resistance vs. temperature output characteristics switchng time (ns) switching time (ns) v gs(off) ? gate-source cutoff voltage (v) i d ? drain current (ma) t a ? temperature ( c) v ds ? drain-source voltage (v) v gs(off) ? gate-source cutoff voltage (v) i d ? drain current (ma) r ds @ i d = 10 ma, v gs = 0 v i dss @ v ds = 15 v, v gs = 0 v i dss r ds t a = 25 c v gs(off) = ? 2 v ? 4 v ? 8 v v gs(off) = ? 2 v ? 4 v ? 8 v i d = 10 ma r ds changes x 0.7%/ c v gs = 0 v t r approximately independent of i d v dd = 1.5 v, r g = 50 ? v gs(l) = ? 10 v t d(on) @ i d = 25 ma t d(on) @ i d = 10 ma t r t d(off) v gs ( off) = ? 2 v t d(off) independent of device v gs(off) v dd = 1.5 v, v gs(l) = ? 10 v v gs(off) = ? 8 v ? 0.4 v ? 0.6 v ? 0.8 v ? 0.2 v v gs(off) = ? 2 v t f i dss ? saturation drain current (ma) i d ? drain current (ma) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? )
j/sst108 series vishay siliconix www.vishay.com 7-4 document number: 70231 s-04028 ? rev. e, 04-jun-01 200 0 160 80 40 0 ? 8 ? 10 ? 4 50 40 20 10 0 120 30 ? 2 ? 6 100 0 ? 12 ? 16 ? 8 ? 4 ? 20 40 20 0 80 60 100 10 1 1 10 100 100 10 1 10 100 1 k 100 k 10 k 100 10 1 0.1 10 100 50 capacitance vs. gate-source voltage transconductance vs. drain current forward transconductance and output conductance vs. gate-source cutoff voltage noise voltage vs. frequency capacitance (pf) v gs ? gate-source voltage (v) i d ? drain current (ma) f ? frequency (hz) v gs(off) ? gate-source cutoff voltage (v) v ds = 0 v f = 1 mhz c iss c rss v ds = 5 v f = 1 khz t a = ? 55 c 125 c v ds = 5 v i d = 10 ma g fs and g os @ v ds = 5 v v gs = 0 v, f = 1 khz g fs g os common gate input admittance (ms) f ? frequency (mhz) g ig b ig t a = 25 c v dg = 20 v i d = 20 ma 40 ma 20 gate leakage current 04812 1 pa 10 pa 100 pa 1 na 10 na 16 20 100 na v dg ? drain-gate voltage (v) i gss @ 125 c t a = 125 c t a = 25 c i d =10 ma 5 ma i gss @ 25 c 10 ma 1 ma v gs(off) = ? 4 v 25 c 5 ma 1 ma i g ? gate leakage e n ? noise voltage nv / hz g fs ? forward transconductance (ms) g os ? output conductance ( s) g fs ? forward transconductance (ms)
j/sst108 series vishay siliconix document number: 70231 s-04028 ? rev. e, 04-jun-01 www.vishay.com 7-5 100 10 1 0.1 10 100 10 1.0 0.1 0.01 10 100 100 10 1 0.1 10 100 50 50 50 common gate forward admittance common gate reverse admittance common gate output admittance ? g fg g og b og ? g rg ? b rg t a = 25 c v dg = 20 v i d = 20 ma (ms) f ? frequency (mhz) (ms) f ? frequency (mhz) (ms) f ? frequency (mhz) t a = 25 c v dg = 20 v i d = 20 ma t a = 25 c v dg = 20 v i d = 20 ma 20 20 20 b fg
j/sst108 j/sst 1 09 j/sst110 v gs(l ) ? 12 v ? 7 v ? 5 v r l * 150 150 150 i d(on) 10 ma 10 ma 10 ma *non-inductive
rise time < 1 ns fall time < 1 ns pulse width 100 ns prf 1 mhz rise time 0.4 ns input resistance 10 m input capacitance 1.5 pf 51 ? 51 ? 1 k ? v in scope v dd r l out v gs(h) v gs(l)
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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